A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region-Reference-Cited by-同舟云学术

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A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region

Published:2017-08 Issue:8 Volume:64 Page:3466-3469
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gholipour Morteza^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7983475/07959605.pdf?arnumber=7959605

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transition metal dichalcogenide FET‐based dynamic random‐access memory;International Journal of Circuit Theory and Applications;2024-07-25

2. Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers;Journal of Materials Science: Materials in Electronics;2023-02

3. All region analytical modeling of 2-D transition metal dichalcogenide FET by considering effect of fringing field and region-wise mobility;Physica E: Low-dimensional Systems and Nanostructures;2023-01

4. Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS2 FETs;Journal of Computational Electronics;2022-07-25

5. Simulation-Based Recommendations for Digital Circuits Design Using Schottky-Barrier-Type GNRFET;ECS Journal of Solid State Science and Technology;2022-07-01

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