Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers-Reference-Cited by-同舟云学术

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Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers

Published:2023-02 Issue:5 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Li Haixia^ORCID,Li Youyong,Jiang Han,Mao Lingfeng,Ni Yanan

Funder

Innovative Research Group Project of the National Natural Science Foundation of China

the “QINGLAN project” in Jiangsu Province

the Special fund project for the transformation of scientific and technological achievements in Jiangsu Province

the Natural Science Foundation Surface Project of the Jiangsu Suqian of China

Science and Technology Support Plan for Youth Innovation of Colleges and Universities of Shandong Province of China

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-09869-8.pdf

Reference49 articles.

1. A.K.A. Lu, G. Pourtois, M. Luisier, I.P. Radu, M. Houssa, On the electrostatic control achieved in transistors based on multilayered MoS2: a first-principles study. J. Appl. Phys. 121, 044505 (2017). https://doi.org/10.1063/1.4974960

2. F. Schwierz, J. Pezoldt, R. Granzner, Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7, 8261–8283 (2015). https://doi.org/10.1039/c5nr01052g

3. K.I. Bolotina, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H.L. Stormer, Ultrahigh electron mobility in suspended graphene. Solid State Commun. 146, 351–355 (2008). https://doi.org/10.1016/j.ssc.2008.02.024

4. M. Shin, M.J. Lee, J.H. Lee, B.H. Park, S. Lee, J.G. Park, Electrical properties of mos2 field-effect transistors in contact with layered CrPS4. J. Korean Phys. Soc. 76, 731–735 (2020). https://doi.org/10.3938/jkps.76.731

5. A.M. van Der Zande et al., Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist. Nano Lett. 14(7), 3869–3875 (2014). https://doi.org/10.1021/nl501077m

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2. Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors;Micromachines;2023-06-12

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