Influence of Drain Doping Engineering on the Ambipolar Conduction and High-Frequency Performance of TFETs-Reference-Cited by-同舟云学术

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Influence of Drain Doping Engineering on the Ambipolar Conduction and High-Frequency Performance of TFETs

Published:2017-09 Issue:9 Volume:64 Page:3541-3547
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shaker Ahmed^ORCID,El Sabbagh Mona,El-Banna Mohammed M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8011577/07983387.pdf?arnumber=7983387

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications;Journal of Electronic Materials;2024-06-29

2. Improvement of C-shaped pocket TFET with sandwiched drain for ambipolar performance and analog/RF performance;Microelectronics Journal;2024-06

3. Performance optimization of high-K pocket hetero-dielectric TFET using improved geometry design;Alexandria Engineering Journal;2024-03

4. Design of Low Power Analog/RF Signal Processing Circuits Using 22 nm Silicon-on-Insulator Schottky Barrier Nano-Wire MOSFET;International Journal of High Speed Electronics and Systems;2024-01-23

5. Impact of back gate-drain overlap on DC and analog/HF performance of a ferroelectric negative capacitance double gate TFET;Physica Scripta;2023-11-24

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