Influence of Drain Doping Engineering on the Ambipolar Conduction and High-Frequency Performance of TFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8011577/07983387.pdf?arnumber=7983387
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