Sub $1\ \mu \mathrm{m}$ Pitch Achievement for Cu/SiO2 Hybrid Bonding

Author:

Ayoub Bassel1,Lhostis Sandrine1,Moreau Stephane2,Souchier Emeline1,Deloffre Emilie1,Mermoz Sebastien1,Cacho Maria Gabriela Gusmao1,Szekely Norah1,Rey Christelle1,Aybeke Ece1,Gredy Victor1,Lamontagne Patrick1,Thomas Olivier3,Fremont Helene4

Affiliation:

1. STMicroelectronics,Crolles Cedex,France,F-38926

2. CEA-Leti, Univ. Grenoble Alpes,Grenoble,France,F-38000

3. Aix-Marseille Université, Université de Toulon, CNRS, IM2NP,Marseille,France

4. University of Bordeaux, UMR 5218,IMS Laboratory,Talence,France,33405

Funder

ECSEL Joint Undertaking (JU)

French National Research Agency (ANR)

Publisher

IEEE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm;Journal of Electronic Materials;2024-06-06

2. Quantifying the Electrical Impact of Bonding Misalignment for 0.5 μm Pitch Hybrid Bonding Structures;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

3. Achieving Sub-nm Copper Recess Controllability for Advanced 3D Integration: An Experimental and Atomic-scale Simulation Study on Wet Atomic Layer Etching Process;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. Hybrid Bonding for Ultra-High-Density Interconnect;Journal of Electronic Packaging;2024-03-08

5. RC delay mitigation for sub 700 nm hybrid bonding pitch;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05

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