Funder
National Natural Science Foundation of China
National Key Research and Development Project
Intelligent Terminal Key Laboratory of Sichuan Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
21 articles.
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1. A fast ramp-up framework for wafer yield improvement in semiconductor manufacturing systems;Journal of Manufacturing Systems;2024-10
2. A Deep Cutoff Capacitance Model for GaN Switch HEMTs;IEEE Transactions on Electron Devices;2024-09
3. Behavioral modeling of LMBA with different back‐off state using PSO optimized XGBoost method;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-08-29
4. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
5. Recent Progress of AlGaN/GaN HEMTs QPZD Model;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10