On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations-Reference-Cited by-同舟云学术

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On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

Published:2013-11 Issue:6 Volume:12 Page:1178-1184
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Mandapati R.,Borkar A.,Srinivasan V. S. S.,Bafna P.,Karkare P.,Lodha S.,Rajendran B.,Ganguly U.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/6654294/06620975.pdf?arnumber=6620975

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-Voltage Designability by Triangular Barrier Engineering in Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Effect of Threshold Switching Selectors on One-Selector One-Resistor Crossbar Arrays;Journal of Physics: Conference Series;2021-05-01

3. Design of selector-based insulator-metal transition model for TiO2 bipolar resistive random access memory;Journal of Applied Physics;2019-08-21

4. Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM;IEEE Transactions on Electron Devices;2017-09

5. Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2016-09

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