Effect of Threshold Switching Selectors on One-Selector One-Resistor Crossbar Arrays

Abstract

Abstract In this paper, the influence of selector on the performance of 1S1R crossbar array memory is focused. First, a read-write circuit is designed based on the 1S1R cell model, which is a Verilog-A physical model built by our research team in the former work. Then, the parameters of selector (Vth, Vhold, RS-on, RS-off,NL) with different array sizes are calculated and analyzed. Different from the influence of selector on 1S1R cell, the read/write margin and read/write power consumption of the 1S1R crossbar array are impacted by selector significantly. Selectors with large Vth improve the write margin, but too large Vth reduce the read margin.The ON-resistance of the selector affects the read power consumption more than the OFF-resistance of the selector does, and the larger nonlinearity improves the overall performance of the crossbar array. Finally, this new 1S1R crossbar array memory is compared with 1R crossbar array memory and the result proved that the optimized memory can reduce the leakage current and power consumption to the large extent.