Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications-Reference-Cited by-同舟云学术

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Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Published:2014-02 Issue:2 Volume:35 Page:199-201
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Leqi,Redolfi Augusto,Adelmann Christoph,Clima Sergiu,Radu Iuliana P.,Chen Yang-Yin,Wouters Dirk J.,Groeseneken Guido,Jurczak Malgorzata,Govoreanu Bogdan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6720122/06684313.pdf?arnumber=6684313

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4. Coexistence of Nonvolatile WORM, Bipolar, Unipolar, and Volatile Resistive Switching Characteristics in a Dry Oxide Layer With Ag Conductive Bridges;IEEE Transactions on Electron Devices;2022-09

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