Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore
Funder
Singapore Ministry of Education
Applied Materials-NUS Advanced Materials Corporate Laboratory Scholarship
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10044479.pdf?arnumber=10044479
Reference31 articles.
1. Demonstration of Ferroelectricity in Al-doped HfO2 with a Low Thermal Budget of 500 °C
2. Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention
3. Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
4. Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High P r of 23.7 μC/cm2
5. Low-power linear computation using nonlinear ferroelectric tunnel junction memristors
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