Affiliation:
1. School of Electronics and Information Engineering, Anhui University, Hefei, Anhui 230601, People’s Republic of China
Funder
Doctoral Research Funding Project of Anhui University
National Natural Science Foundation of China
Natural Science Foundation of Anhui Province
Subject
General Physics and Astronomy
Reference46 articles.
1. Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
3. Resistive Random Access Memory (ReRAM) Based on Metal Oxides
4. M. Jo, D. J. Seong, S. Kim, J. Lee, W. Lee, J. B. Park, S. Park, S. Jung, J. Shin, D. Lee, and H. Hwang, “Novel cross-point resistive switching memory with self-formed Schottky barrier,” in 2010 Symposium on VLSI Technology (IEEE, 2010), pp. 53–54.
5. W. Lee, J. Park, J. Shin, J. Woo, S. Kim, G. Choi, S. Jung, S. Park, D. Lee, E. Cha, H. D. Lee, S. G. Kim, S. Chung, and H. Hwang, “Varistor-type bidirectional switch (JMAX > 107 A/cm2, Selectivity ∼ 104) for 3D bipolar resistive memory arrays,” in Digest of Technical Papers—Symposium on VLSI Technology (IEEE, 2012), pp. 37–38.
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