On-Voltage Designability by Triangular Barrier Engineering in Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM
Author:
Affiliation:
1. Electrical Engineering, IIT,Bombay,India,400076
2. IIT,Gandhinagar,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511482.pdf?arnumber=10511482
Reference7 articles.
1. Toward memristive in-memory computing: principles and applications
2. On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations
3. Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
4. Effect of Oxygen Migration and Interface Engineering on Resistance Switching Behavior of Reactive Metal/Polycrystalline Pr0.7Ca0.3MnO3 Device for Nonvolatile Memory Applications;Seong;Tech. Dig. IEDM,2009
5. A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry
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