Top–Down Fabrication of Gate-All-Around Vertically Stacked Silicon Nanowire FETs With Controllable Polarity-Reference-Cited by-同舟云学术

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Top–Down Fabrication of Gate-All-Around Vertically Stacked Silicon Nanowire FETs With Controllable Polarity

Published:2014-11 Issue:6 Volume:13 Page:1029-1038
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

De Marchi Michele,Sacchetto Davide,Zhang Jian,Frache Stefano,Gaillardon Pierre-Emmanuel,Leblebici Yusuf,De Micheli Giovanni

Funder

European Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/6949178/06923475.pdf?arnumber=6923475

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