Enabling 3D NAND Trench Cells for Scaled Flash Memories
Author:
Affiliation:
1. Imec, Kapeldreef 75,Leuven,Belgium,B-3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145992.pdf?arnumber=10145992
Reference10 articles.
1. A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity
2. Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices
3. 3D NAND Scaling in the next decade
4. T8-3 Highly-Reliable Cell Characteristics with 128Layer Single-Stack 3D-NAND Flash Memory;park;Symp VLSI Technol Tech Dig,2021
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1. Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation;IEEE Transactions on Electron Devices;2024-01
2. Optimal Machine Learning Model for the Relationship Between Grain Size, Channel Thickness, and Grain Boundary Trap Density in 3D NAND Strings;2023 International Conference on Electrical, Electronics, Communication and Computers (ELEXCOM);2023-08-26
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