A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity-Reference-Cited by-同舟云学术

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A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lue Hang-Ting,Hsu Tzu-Hsuan,Wu Chen-Jun,Chen Wei-Chen,Yeh Teng-Hao,Chang Kuo-Pin,Hsieh Chih-Chang,Du Pei-Ying,Hsiao Yi-Hsuan,Jiang Yu-Wei,Lee Guan-Ru,Lo Roger,Su Yan-Ru,Huang Chiatze,Lai Sheng-Chih,Liang Li-Yang,Chen Chieh-Fang,Hung Min-Feng,Hu Chih-Wei,Chiu Chia-Jung,Lu Chih-Yuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409617.pdf?arnumber=7409617

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AERO: Adaptive Erase Operation for Improving Lifetime and Performance of Modern NAND Flash-Based SSDs;Proceedings of the 29th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, Volume 3;2024-04-27

2. Reaping Both Latency and Reliability Benefits With Elaborate Sanitization Design for 3D TLC NAND Flash;IEEE Transactions on Computers;2023-11

3. Creating the Future with Silicon;Advanced Materials Technologies;2023-06-17

4. Enabling 3D NAND Trench Cells for Scaled Flash Memories;2023 IEEE International Memory Workshop (IMW);2023-05

5. Recent Progress on 3D NAND Flash Technologies;Electronics;2021-12-18

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