Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices-Reference-Cited by-同舟云学术

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Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices

Published:2020-05 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Memory Workshop (IMW)
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Author:

Breuil L.,El Hajjam G. K.,Ramesh S.,Ajaykumar A.,Arreghini A.,Zhang L.,Sebaai F.,Nyns L.,Raymaekers T.,Rosmeulen M.,Van den Bosch G.,Furnemont A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9106715/9108108/09108111.pdf?arnumber=9108111

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron density measurement of Ar, N2, O2, and Ar mixtures (with N2 and O2) gas in inductively coupled plasma (ICP) using terahertz time domain spectroscopy;Optics & Laser Technology;2025-01

2. Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Enabling 3D NAND Trench Cells for Scaled Flash Memories;2023 IEEE International Memory Workshop (IMW);2023-05

4. Gate MOSCAP Studies on Electroless Deposited Nickel Boron as Word Line Candidate Metal for Future Scaled 3-D NAND Flash;ECS Journal of Solid State Science and Technology;2023-04-01

5. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories;Micromachines;2021-09-08

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