25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS
Author:
Affiliation:
1. Waseda University,The School of Fundamental Science and Enginnering,Tokyo,Japan
2. Waseda University,The Graduate School of Information, Production and Systems,Fukuoka,Japan
Funder
University of Tokyo
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9719587/9719681/09719847.pdf?arnumber=9719847
Reference9 articles.
1. High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs
2. A 53% P AE Envelope Tracking GaN Power Amplifier for 20 MHz Bandwidth LTE Signals;liu;IEEE PAWR,2016
3. Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers
4. A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS
5. Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS;IEICE Transactions on Electronics;2023-11-01
2. Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS;IEICE Transactions on Electronics;2023-07-01
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