A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology
Author:
Affiliation:
1. Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Freiburg im Breisgau, Germany
Funder
German Federal Ministry of Defence
Bundeswehr Technical Center for Information Technology and Electronics (WTD81) in the framework of the MIKOSENS Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
https://ieeexplore.ieee.org/ielam/7260/9448609/9360843-aam.pdf
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