Short-Circuit Capability Demonstrated for GaN Power Switches-Reference-Cited by-同舟云学术

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Short-Circuit Capability Demonstrated for GaN Power Switches

Published:2021-06-14 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Bisi Davide,Gritters John,Hosoda Tsutomu,Kamiyama Masamichi,Cruse Bill,Huang YuLu,McKay Jim,Gupta Geetak,Lal Rakesh,Neufeld Carl,Zuk Philip,Wu YiFeng,Parikh Primit,Mishra Umesh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9486978/9486980/09486987.pdf?arnumber=9486987

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique;IEEE Electron Device Letters;2024-02

2. 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability;IEEE Electron Device Letters;2023-10

3. High Bandwidth Integrator for Differential,PCB Integrated Rogowski Coils;2023 International Conference on Electrical Drives and Power Electronics (EDPE);2023-09-25

4. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

5. High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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