BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications-Reference-Cited by-同舟云学术

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BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

Published: Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)
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Author:

Monroy A.,Laurens W.,Marty M.,Dutartre D.,Gloria D.,Carbonero J.L.,Perrotin A.,Roche M.,Chantre A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6533/17428/00803540.pdf?arnumber=803540

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process;Solid-State Electronics;2007-06

2. A New Degradation Mode for Heterojunction Bipolar Transistors Under Reverse-Bias Stress;IEEE Transactions on Device and Materials Reliability;2006-06

3. 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications;IEEE Journal of Solid-State Circuits;2005-10

4. High performance rf front end circuits using SiGe:C BiCMOS+copper technologies;Applied Surface Science;2004-03

5. Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications;Microelectronics Reliability;2001-09

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