1. H.J. Osten, D. Knoll, B. Heinemann, H. Rucker, B. Tillack, Carbon doped SiGe heterojunction bipolar transistors for high frequency applications, in: BCTM Proceedings, September 1999, pp. 109–116.
2. S.A.S. Onge, et al., A 0.24 μm SiGe BiCMOS mixed-signal rf production technology featuring a 47 GHz ft HBT and 0.18 μm Leff CMOS, in: BCTM Proceedings, September 1999, pp. 117–120.
3. A. Monroy, W. Laurens, M. Marty, D. Dutarte, D. Gloria, J.L. Carbonero, A. Perrotin, M. Roche, A. Chantre, BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications, in: BCTM Proceedings, September 1999, pp. 121–124.
4. M. Racanelli, et al., BC35: a 0.35 um, 30 GHz production rf BiCMOS technology, in: BCTM Proceedings, September 1999, pp. 125–128.
5. K. Washio, M. Kondo, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto, T. Harada, A 0.2 μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7 ps ECL, in: Proceedings of the IEDM Technical Digest, December 1999, pp. 557–560.