MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects-Reference-Cited by-同舟云学术

MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Fang Ryan¹,Ma Dylan¹,Radhakrishna Ujwal²,Wei Lan¹

Affiliation:

1. University of Waterloo,Department of Electrical and Computer Engineering

2. Texas Instruments Inc,Kilby Research Labs

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051741.pdf?arnumber=10051741

Reference7 articles.

1. Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model

2. Modeling gallium-nitride based high electron Mobility transistors: linking device physics to high voltage and high frequency circuit design;radhakrishna;Thesis Mas-sachusetts Institute of Technology,2016

3. AlGaN/GaN HEMTs-an overview of device operation and applications

4. Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

5. MIT Virtual Source GaN HEMT: MVSG Model Manual;radhakrishna;3 1 0 Massachusetts Institute of Technology,2022

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