Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity-Reference-Cited by-同舟云学术

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Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Hossain Toiyob¹,Sikder Bejoy¹,Azad Md. Tasnim¹,Xie Qingyun²,Yuan Mengyang²,Yagyu Eiji³,Teo Koon Hoo⁴,Palacios Tomás²,Chowdhury Nadim¹

Affiliation:

1. Bangladesh University of Engineering and Technology,Dhaka,Bangladesh,1205

2. Massachusetts Institute of Technology,Cambridge,MA,U.S.A,02139

3. Mitsubishi Electric Corporation,Amagasaki,Japan,661-8661

4. Mitsubishi Electric Research Laboratories,Cambridge,MA,U.S.A,02139

Funder

Bangladesh University of Engineering and Technology

Air Force Office of Scientific Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512349.pdf?arnumber=10512349

Reference11 articles.

1. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

2. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

3. High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

4. Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation

5. Simple interpretation of metal/wurtzite–GaN barrier heights

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