Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs

Author:

Weimer Christoph1,Jin Xiaodi1,Fischer Gerhard G.2,Schröter Michael1

Affiliation:

1. Technische Universität Dresden,Chair for Electron Devices and Integrated Circuits,Dresden,Germany,01062

2. Leibniz-Institut für Innovative Mikroelektronik,IHP,Frankfurt (Oder),Germany,15236

Funder

National Science Foundation

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Design and Characterization of a 54–76 GHz SiGe Power Amplifier;2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS);2024-02-27

3. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. A W-band Class-F234 SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO6dB PAE and 26% 1-dB Large-Signal Power Bandwidth;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. Characterization, Analysis and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications;IEEE Transactions on Device and Materials Reliability;2023

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