Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs
Author:
Affiliation:
1. Technische Universität Dresden,Chair for Electron Devices and Integrated Circuits,Dresden,Germany,01062
2. Leibniz-Institut für Innovative Mikroelektronik,IHP,Frankfurt (Oder),Germany,15236
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051735.pdf?arnumber=10051735
Reference12 articles.
1. DMT-pylab - A Python-based measurement instruments remote control framework;weimer;Private project,0
2. Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System
3. Methods for Determining the Collector Series Resistance in SiGe HBTs—A Review and Evaluation Across Different Technologies
4. DMT-core: A Python Toolkit for Semiconductor Device Engineers
5. A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTs
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1. Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. Design and Characterization of a 54–76 GHz SiGe Power Amplifier;2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS);2024-02-27
3. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
4. A W-band Class-F234 SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO6dB PAE and 26% 1-dB Large-Signal Power Bandwidth;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. Characterization, Analysis and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications;IEEE Transactions on Device and Materials Reliability;2023
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