Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System-Reference-Cited by-同舟云学术

Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System

Published:2022-06-19 Issue: Volume: Page:
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Container-title:2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
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Author:

Weimer Christoph¹,Vardarli Eren¹,Fischer Gerhard G.²,Schroter Michael¹

Affiliation:

1. Chair for Electron Devices and Integrated Circuits, Technische Universität Dresden,Dresden,Germany

2. IHP, Leibniz-Institut für innovative Mikroelektronik,Frankfurt (Oder),Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865576.pdf?arnumber=9865576

Reference11 articles.

1. Emerging SiGe HBT Reliability Issues for Mixed-Signal Circuit Applications

2. Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions

3. HICUM/L2: Extensions over the last decade

4. A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

5. Advancements on reliability-aware analog circuit design;ardouin;2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC),0

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1. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. RF Reliability of SiGe and InP HBTs: A Comparative Study;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

3. Characterization, Analysis and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications;IEEE Transactions on Device and Materials Reliability;2023

4. Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16