Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Author:

Wu Pei-Yu,Zheng Hao-Xuan,Shih Chih-ChengORCID,Chang Ting-ChangORCID,Chen Wei-Jang,Yang Chih-Cheng,Chen Wen-Chung,Tai Mao-ChouORCID,Tan Yung-Fang,Huang Hui-Chun,Ma Xiao-HuaORCID,Hao Yue,Tsai Tsung-MingORCID,Sze Simon M.

Funder

Ministry of Science and Technology, Taiwan

Core Facilities Laboratory for Nano-Science and Nano Technology, Kaohsiung, Pingtung

Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, through the focus ion beam (FIB) engineer Mr. Yan-Wen Chen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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