Investigations of Sic Doping Effects on the Performance Improvement of Zno-Based Rrams and Conduction Mechanism Analysis at Both High and Low Temperature-Reference-Cited by-同舟云学术

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Investigations of Sic Doping Effects on the Performance Improvement of Zno-Based Rrams and Conduction Mechanism Analysis at Both High and Low Temperature

Published:2024 Issue: Volume: Page:
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Author:

Chu Sheng-Yuan,Wang Ting-Jui,Shih Po-An,Yeh Kuan-Lin,Wang Jia-Hao,Li Cheng-Ying

Publisher

Elsevier BV

Reference41 articles.

1. Amorphous ZnO based resistive random access memory;Y Huang,2016

2. Status and Prospects of ZnO-Based Resistive Switching Memory Devices;F M Simanjuntak;Nanoscale Res. Lett., Review,2016

3. Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device;L Zhang;Semicond. Sci. Technol., Article,2018

4. Effects of Nb doping on switching-voltage stability of zinc oxide thin films;C.-Y Li;Journal of Applied Physics,2020

5. COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES;M Bhatnagar;Ieee Transactions on Electron Devices, Article,1993

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