Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor-Reference-Cited by-同舟云学术

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Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor

Published:2023-09 Issue: Volume:1287 Page:135717
ISSN:0022-2860
Container-title:Journal of Molecular Structure
language:en
Short-container-title:Journal of Molecular Structure

Author:

Liang Haotian^ORCID,Ke Chuan^ORCID,Sun Bai,Zhu Shouhui,Wang Jiangqiu,Yang Chuan,Mao Shuangsuo,Zhao Yong^ORCID

Funder

Fujian Normal University

National Key Research and Development Program of China

Sichuan Province Science and Technology Support Program

Fundamental Research Funds for the Central Universities

Ministry of Finance of the People's Republic of China

Publisher

Elsevier BV

Subject

Inorganic Chemistry,Organic Chemistry,Spectroscopy,Analytical Chemistry

Reference36 articles.

1. Remote control of resistive switching in TiO2 based resistive random access memory device;Sahu;Sci. Rep.,2017

2. Normally-off logic based on resistive switches—Part I: logic Gates;Balatti;IEEE Trans. Electron Dev.,2015

3. Structure, properties and applications of two-dimensional hexagonal boron nitride;Roy;Adv. Mater.,2021

4. Filamentary resistive switching and capacitance-voltage characteristics of the a-IGZO/TiO2 memory;Heo;Sci. Rep.,2020

5. Review of resistive switching mechanisms for memristive neuromorphic devices;Yang;Chin. Phys. B,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction;Journal of Applied Physics;2024-04-05

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