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Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs

  • Published:2020-06 Issue:6 Volume:41 Page:832-835
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Im Ki-SikORCID,An Sung Jin,Theodorou Christoforos G.ORCID,Ghibaudo GerardORCID,Cristoloveanu SorinORCID,Lee Jung-HeeORCID

Funder

National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology

Nano Material Technology Development Program through the NRF funded by the Ministry of Science, ICT and Future Planning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer;physica status solidi (a);2024-07-08

2. Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Design and Performance Analysis of High-k Gate All Around Fin-field Effect Transistor;International Journal of Engineering;2024

4. Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor;Nanomaterials;2023-12-17

5. TCAD Simulation Analysis on Gate Structure and Trap Effect of GaN-Based Junctionless FinFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
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