Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC-Reference-Cited by-同舟云学术

Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC

Published:2022-03-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Horii Kohei¹,Morikawa Ryuzo¹,Katada Ryunosuke¹,Hata Katsuhiro¹,Sakurai Takayasu¹,Hayashi Shin-Ichiro²,Wada Keiji²,Omura Ichiro³,Takamiya Makoto¹

Affiliation:

1. The University of Tokyo,Tokyo,Japan

2. Tokyo Metropolitian University,Tokyo,Japan

3. Kyushu Institute of Technology,Fukuoka,Japan

Funder

NEDO

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773623.pdf?arnumber=9773623

Reference11 articles.

1. Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

2. Balancing the switching losses of paralleled SiC MOSFETs using an intelligent gate driver;luedecke;Proc International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2020

3. Variable Gate Voltage Control for Paralleled SiC MOSFETs

4. A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control

5. Current Sharing Control Strategy for IGBTs Connected in Parallel

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