Variable Gate Voltage Control for Paralleled SiC MOSFETs-Reference-Cited by-同舟云学术

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Variable Gate Voltage Control for Paralleled SiC MOSFETs

Published:2020-09-23 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Wei Yuqi,Sweeting Rosten,Hossain Md Maksudul,Mhiesan Haider,Mantooth Alan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9360228/9360248/09360253.pdf?arnumber=9360253

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Balancing of Parallel High Current SiC Half Bridge Modules using Delay Based Active Gate Driving with Inter-Device Inductances;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Active Autonomous Open-Loop Technique for Static and Dynamic Current Balancing of Parallel-Connected Silicon Carbide MOSFETs;Energies;2023-11-20

3. Design of a Closed-Loop Control to Balance Unequal Temperature Distributions of Parallel-Connected SiC MOSFETs;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

4. Digital Gate ICs for Driving and Sensing Power Devices to Achieve Low-Loss, Low-Noise, and Highly Reliable Power Electronic Systems;2023 IEEE Custom Integrated Circuits Conference (CICC);2023-04

5. Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC;2022 IEEE Applied Power Electronics Conference and Exposition (APEC);2022-03-20

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