A Monolithic 200V GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters Achieving 98.3% Peak Efficiency
Author:
Affiliation:
1. MinDCet NV,Leuven,Belgium
2. Thales Alenia Space Belgium,Charleroi,Belgium
3. imec vzw,Leuven,Belgium
4. ESA-ECSAT,Oxfordshire,United Kingdom
5. ESA-ESTEC,Noordwijk,The Netherlands
Funder
European Space Agency
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773755.pdf?arnumber=9773755
Reference7 articles.
1. Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters
2. A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency
3. Synchronisation free non‐coherent on–off keying demodulation techniques
4. Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates
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1. A 400 V Dual-Phase Series-Capacitor Buck Converter GaN IC With Integrated Closed-Loop Control;IEEE Transactions on Power Electronics;2024-08
2. Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs;Russian Microelectronics;2024-06
3. Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters;Electronics;2024-04-03
4. A 500-V, 6.25-MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies;IEEE Solid-State Circuits Letters;2024
5. Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10
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