Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecture
Author:
Affiliation:
1. Helmholtz Zentrum Dresden-Rossendorf,Dresden,Germany,01328
2. National Institute for Materials Science,Tsukuba,Japan,305-0044
3. Technische Universität Dresden,Dresden,Germany,01062
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9855770/9855647/09855785.pdf?arnumber=9855785
Reference7 articles.
1. All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality
2. The hot pick-up technique for batch assembly of van der Waals heterostructures
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1. 2D Material Tungsten Diselenide (WSe2 ): Its Properties, Applications, and Challenges;Nanoelectronic Devices and Applications;2024-06-26
2. 2D BDiode – A switchable bidirectional diode for analog electronic circuits fabricated entirely from 2D materials;Micro and Nano Engineering;2024-06
3. Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions;Scientific Reports;2024-03-09
4. I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures;IEEE Journal of the Electron Devices Society;2023
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