All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality-Reference-Cited by-同舟云学术

All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Author:

Nakamura Keigo¹,Nagamura Naoka²³^ORCID,Ueno Keiji⁴,Taniguchi Takashi²^ORCID,Watanabe Kenji²^ORCID,Nagashio Kosuke¹^ORCID

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2. National Institute for Materials Science, Ibaraki 305-0044, Japan

3. PRESTO, Japan Science and Technology Agency (JST), Saitama 332-0012, Japan

4. Department of Chemistry, Saitama University, Saitama 338-8570, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Precursory Research for Embryonic Science and Technology

Canon Foundation for Scientific Research

Japan Society for the Promotion of Science

Samco Science and Technology Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference52 articles.

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