I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures-Reference-Cited by-同舟云学术

I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe₂/MoS₂ Heterojunction Diode at Cryogenic Temperatures

Author:

Matthus Christian D.¹^ORCID,Chava Phanish²^ORCID,Watanabe Kenji³^ORCID,Taniguchi Takashi⁴^ORCID,Mikolajick Thomas⁵,Helm Manfred²^ORCID,Erbe Artur²

Affiliation:

1. Chair for Circuit Design and Network Theory, Technische Universität Dresden, Dresden, Germany

2. Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden-Rossendorf, Dresden, Germany

3. Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan

4. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan

5. Chair of Nanoelectronics, Technische Universität Dresden, Dresden, Germany

Funder

SPES3 Project funded by the German Ministry for Education and Research (BMBF) through the Forschung für neue Mikroelektronik (ForMikro) Program

European Social Fund and the Free State of Saxony in the Project Re-Learning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

Reference41 articles.

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