Affiliation:
1. School of Electronics Engineering, VIT-AP University, Near Vijayawada, 522501, India
2. Department of ECE, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Amaravati
Campus, 522503, Andhra Pradesh, India
Abstract
In this chapter, we study the characteristics of the 2-dimensional material
Tungsten Diselenide (WSe2
), along with its properties, applications, and challenges.
Here, we present in detail the evaluation of TMDC materials and other 2D materials
available in comparison to WSe2
materials. We also differentiate these materials based
on their qualities, characteristics, advantages, and applications in detail. Later, we
discuss the designed device structure of the WSe2FET along with its simulation results.
Simulation analysis describes the input and output characteristics of a transistor with
WSe2
as channel material and compares its response with the conventional MOSFET.
Thereafter, we discuss the hetero-dielectric structure performance with different high-K
values, and then a dielectric-modulated biosensor device is designed to study its
characteristics and sensitivity. It is observed from the analysis that hetero-dielectric
structure devices have a high Ion/Ioff current ratio compared to conventional MOSFET
due to high interface layers interaction and high gate controlling capability. Finally, we
study the sensitivity behavior of the device and understand that as the K-value rises, the
device sensitivity increases because of the high electrostatic property in nature. WSe2
has a larger surface-to-volume ratio, which provides a larger sensing area for
interactions with biomolecules, potentially enhancing the sensitivity of the biosensor.<br>
Publisher
BENTHAM SCIENCE PUBLISHERS