A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7457179/07437412.pdf?arnumber=7437412
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Variability of MOSFET Series Resistance Extracted from Individual Devices: Is Direct Variability Measurement Possible?;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27
2. MOSFET series resistance extraction at cryogenic temperatures;Japanese Journal of Applied Physics;2023-01-18
3. Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04
4. Single Device MOSFET Series Resistance Extraction Methods: Comparison Between Newer and Older;2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS);2022-03-21
5. A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility;Japanese Journal of Applied Physics;2022-02-10
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