Single Device MOSFET Series Resistance Extraction Methods: Comparison Between Newer and Older
Author:
Affiliation:
1. The University of Tokyo,Institute of Industrial Science,Tokyo,JAPAN
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9898143/9898103/09898270.pdf?arnumber=9898270
Reference24 articles.
1. TCAD Validation of an Intercept-at-Zero-Gate-Length MOSFET Series Resistance Extraction Method
2. Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs
3. A Constant-Mobility Method to Enable MOSFET Series-Resistance Extraction
4. Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction
5. A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Simple Method for Series Resistance Extraction in Ultrascaled FinFETs Using Flicker Noise;IEEE Transactions on Electron Devices;2023-11
2. Variability of MOSFET Series Resistance Extracted from Individual Devices: Is Direct Variability Measurement Possible?;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27
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