Abstract
Abstract
A simple MOSFET series resistance extraction method using multiple drain current versus gate voltage curves of a single device is proposed, where mobility modulation by a horizontal electric field (i.e., weak velocity saturation) is taken into account. The method is validated using TCAD, where series resistance determined from internal potential distributions was used as a reliable reference. Measurement results were also obtained which further support the validity of the method.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
5 articles.
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