Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices-Reference-Cited by-同舟云学术

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Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices

Published:2019-10 Issue:10 Volume:66 Page:4251-4257
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Yong^ORCID,Yang Wentao^ORCID,Feng Hao^ORCID,Huang Linhua,Onozawa Yuichi,Wakimoto Setsuko,Fujishima Naoto,Sin Johnny K. O.

Funder

Fuji Electric Company, Ltd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8845594/08793109.pdf?arnumber=8793109

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices;Microelectronics Journal;2024-10

2. The Study of the Main Junction of the VDMOS Termination;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

3. Enhancement of Breakdown Voltage Using Trench Edge Termination Technique in SiC-Based Power Device;Lecture Notes in Electrical Engineering;2023-11-03

4. Investigation on Trench Edge Termination in SiC Based Power Device;Lecture Notes in Electrical Engineering;2023

5. Trench edge termination in a GaN-based power device;Materials Today: Proceedings;2023

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