A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene-Reference-Cited by-同舟云学术

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A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

Published:2009-06 Issue:6 Volume:30 Page:687-689
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Theolier L.,Mahfoz-Kotb H.,Isoird K.,Morancho F.,Assie-Souleille S.,Mauran N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4968003/04915753.pdf?arnumber=4915753

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Optimized design of single trench termination combined with P-type buried layers for power MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Enhancement of Breakdown Voltage Using Trench Edge Termination Technique in SiC-Based Power Device;Lecture Notes in Electrical Engineering;2023-11-03

4. Investigation on Trench Edge Termination in SiC Based Power Device;Lecture Notes in Electrical Engineering;2023

5. Trench edge termination in a GaN-based power device;Materials Today: Proceedings;2023

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