Optimized design of single trench termination combined with P-type buried layers for power MOSFETs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Optimized design of single trench termination combined with P-type buried layers for power MOSFETs

Published:2023-11-27 Issue: Volume: Page:165-168
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
language:
Short-container-title:

Author:

Wang Xiao¹,Zhou Ji Zong²,Zhang Yu Min²,Wang Jian Feng³,Xu Ke²

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China,Hefei,Anhui,China,230026

2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy Sciences (CAS),Suzhou,PR China,215123

3. Suzhou Nanowin Science and Technology Co Ltd,Suzhou,PR China,215123

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399693.pdf?arnumber=10399693

Reference14 articles.

1. Saturation Current and On-Resistance Correlation during During Repetitive Short-Circuit Conditions on SiC JFET Transistors

2. Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study

3. State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates

4. Lateral GaN JFET Devices on Large Area Engineered Substrates

5. A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP