Breakdown voltage capability of vertical 4H–SiC power devices-Reference-Cited by-同舟云学术

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Breakdown voltage capability of vertical 4H–SiC power devices

Published:2024-08 Issue: Volume:178 Page:108347
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Godignon Philippe^ORCID,Biscarrat Jérôme,Tranchesset Miya,Lavieville Romain,Tournier Dominique,Brosselard Pierre,Montserrat Josep

Publisher

Elsevier BV

Reference60 articles.

1. Power electronics Handbook;Rashid,2018

2. Fundamentals of Power Semiconductor Devices;Baliga,2009

3. The Circuit Designer's Companion;Wilson,2017

4. Theory and breakdown voltage for planar devices with a single field limiting ring;Adler;IEEE Transaction on Electron Devices,1977

5. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

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