Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx
Author:
Affiliation:
1. Department of Microsystems and Nanotechnology (MiNaLab), SINTEF Digital, Oslo, Norway
2. Department of Physics, University of Oslo, Oslo, Norway
Funder
The Research Council of Norway
The Norwegian Micro- and Nano-Fabrication Facility
NorFab
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503869/9801835/09772488.pdf?arnumber=9772488
Reference58 articles.
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2. Data of ALD Al 2 O 3 rear surface passivation, Al 2 O 3 PERC cell performance, and cell efficiency loss mechanisms of Al 2 O 3 PERC cell
3. Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon
4. Effect of the native oxide on the surface passivation of Si by Al2O3
5. On effective surface recombination parameters
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3. Gamma-radiation hardness and long-term stability of ALD-Al2O3 surface passivated Si;Journal of Applied Physics;2023-04-17
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