Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon-Reference-Cited by-同舟云学术

Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Published:2021-09-15 Issue:11 Volume:5 Page:2100605
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Steinhauser Bernd¹^ORCID,Niewelt Tim²³^ORCID,Richter Armin¹^ORCID,Eberle Rebekka²³^ORCID,Schubert Martin C.²^ORCID

Affiliation:

1. Advanced Development of High‐Efficiency Silicon Solar Cells Fraunhofer Institute for Solar Energy Systems Heidenhofstr. 2 Freiburg 79110 Germany

2. Quality Assurance, Characterization and Simulation Fraunhofer Institute for Solar Energy Systems Heidenhofstr. 2 Freiburg 79110 Germany

3. INATECH University of Freiburg Emmy-Noether-Straße 2 Freiburg 79110 Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202100605

Reference32 articles.

1. Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

2. Taking monocrystalline silicon to the ultimate lifetime limit

3. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

4. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

5. Excellent Surface Passivation Quality on Crystalline Silicon Using Industrial-Scale Direct-Plasma TOPCon Deposition Technology

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