X–Ka Band Epitaxial ScAlN/AlN/NbN/SiC High-Overtone Bulk Acoustic Resonators
Author:
Affiliation:
1. Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC, USA
Funder
Defense Advanced Research Projects Agency
COmpact Front-end Filters at the ElEment-level (COFFEE) Program
Office of Naval Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10081123/10040678.pdf?arnumber=10040678
Reference24 articles.
1. A Film Bulk Acoustic Resonator Based on Ferroelectric Aluminum Scandium Nitride Films
2. GaN-based Periodic High-Q RF Acoustic Resonator with Integrated HEMT
3. Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
4. Correlations between microstructure and Q-factor of tunable thin film bulk acoustic wave resonators
5. KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
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