KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode-Reference-Cited by-同舟云学术

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Published:2015-02-23 Issue:8 Volume:106 Page:082110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo W.¹^ORCID,Kirste R.¹,Bryan I.¹,Bryan Z.¹,Hussey L.¹,Reddy P.¹^ORCID,Tweedie J.²,Collazo R.¹,Sitar Z.¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

2. Adroit Materials, Apex, North Carolina 27539, USA

Funder

National Science Foundation (NSF)

Defense Advanced Research Projects Agency (DARPA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913705

Reference24 articles.

1. 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

2. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

3. Ultraviolet semiconductor laser diodes on bulk AlN

4. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

5. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

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