GaN-based Periodic High-Q RF Acoustic Resonator with Integrated HEMT-Reference-Cited by-同舟云学术

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GaN-based Periodic High-Q RF Acoustic Resonator with Integrated HEMT

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Gokhale Vikrant J.,Downey Brian P.,Katzer D. Scott,Ruppalt Laura B.,Meyer David J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993528.pdf?arnumber=8993528

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurements of Thermal Resistance Across Buried Interfaces with Frequency-Domain Thermoreflectance and Microscale Confinement;ACS Applied Materials & Interfaces;2024-07-24

2. Metal-Free High-Overtone Bulk Acoustic Resonators With Outstanding Acoustic Match and Thermal Stability;IEEE Electron Device Letters;2023-11

3. X–Ka Band Epitaxial ScAlN/AlN/NbN/SiC High-Overtone Bulk Acoustic Resonators;IEEE Electron Device Letters;2023-04

4. X-band epi-BAW resonators;Journal of Applied Physics;2022-07-14

5. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects;Journal of Applied Physics;2021-10-28

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