X-band epi-BAW resonators-Reference-Cited by-同舟云学术

X-band epi-BAW resonators

Published:2022-07-14 Issue:2 Volume:132 Page:024503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhao Wenwen¹^ORCID,Asadi Mohammad Javad²,Li Lei²,Chaudhuri Reet²^ORCID,Nomoto Kazuki²,Xing Huili Grace²³⁴^ORCID,Hwang James C. M.²³^ORCID,Jena Debdeep²³⁴^ORCID

Affiliation:

1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

3. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

4. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA

Abstract

Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8–12 GHz) of the microwave spectrum. The resonators show a [Formula: see text] and a figure of merit [Formula: see text] THz. The material stack of these epi-AlN FBARs allows monolithic integration with AlN/GaN/AlN quantum well high-electron-mobility-transistors to a unique RF front end and also enable integration with epitaxial nitride superconductors for microwave filters for quantum computing.

Funder

Semiconductor Research Corporation

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0097458

Reference36 articles.

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