1 kV Self-Aligned Vertical GaN Superjunction Diode-Reference-Cited by-同舟云学术

1 kV Self-Aligned Vertical GaN Superjunction Diode

Published:2024-01 Issue:1 Volume:45 Page:12-15
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ma Yunwei¹,Porter Matthew¹^ORCID,Qin Yuan¹^ORCID,Spencer Joseph¹,Du Zhonghao²^ORCID,Xiao Ming¹^ORCID,Wang Yifan¹^ORCID,Kravchenko Ivan³^ORCID,Briggs Dayrl P.³^ORCID,Hensley Dale K.³^ORCID,Udrea Florin⁴,Tadjer Marko⁵^ORCID,Wang Han⁶,Zhang Yuhao¹^ORCID

Affiliation:

1. Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA

3. Oak Ridge National Laboratory, Oak Ridge, TN, USA

4. Department of Engineering, University of Cambridge, Cambridge, U.K

5. U.S. Naval Research Laboratory, Washington, DC, USA

6. Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, SAR, China

Funder

Office of Naval Research monitored by Lynn Petersen

National Science Foundation

Center for Power Electronics Systems (CPES) Power Management Industry Consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10376160/10318822-aam.pdf

Reference31 articles.

1. Superjunction Power Devices, History, Development, and Future Prospects

2. Multidimensional device architectures for efficient power electronics

3. A new generation of high voltage MOSFETs breaks the limit line of silicon

4. Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode

5. 0.63 mΩcm2/1170 V 4H-SiC super junction V-groove trench MOSFET;Masuda

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