Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode

Author:

Zhong Xueqian,Wang Baozhu,Sheng Kuang

Publisher

IEEE

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01

2. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique;Micromachines;2023-12-07

3. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability;2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL);2023-06-25

5. Multidimensional device architectures for efficient power electronics;Nature Electronics;2022-11-17

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